MRF151A Datasheet, PDF (3/8 Pages) Tyco Electronics – The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

BIAS
0 – 12 V
R1
C4
+
C5
R3
RF INPUT
C1
C2
L1
C3
R2
RFC2
+
C10
C11
L4
+50 V
D.U.T.
L3
L2
C9
RF OUTPUT
C6
C7
C8
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 60 WV Electrolytic
D1 — 1N5347 Zener Diode
L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Choke
RFC2 — VK200–4B
R1 — 150 Ω, 1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120 Ω, 1/2 W Carbon
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, ε_r = 5.0
Figure 2. 175 MHz Test Circuit
1000
500
200
100
50
20
00
TYPICAL CHARACTERISTICS
C_iss
C_oss
C_rss
10
20
30
40
V_DS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus
Drain–Source Voltage
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
50
0.9– ₂₅
1_D = 5 A
4A
2A
1A
250 mA
100 mA
0
25
50
75
100
T_C, CASE TEMPERATURE (°C)
Figure 4. Gate–Source Voltage versus
Case Temperature
REV 1
3