MRF151A Datasheet, PDF (2/8 Pages) Tyco Electronics – The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V_GS = 0, I_D = 100 mA)
Zero Gate Voltage Drain Current (V_DS = 50 V, V_GS = 0)
Gate–Body Leakage Current (V_GS = 20 V, V_DS = 0)
V_(BR)DSS
125
—
—
Vdc
I_DSS
—
—
5.0
mAdc
I_GSS
—
—
1.0
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (V_DS = 10 V, I_D = 100 mA)
Drain–Source On–Voltage (V_GS = 10 V, I_D = 10 A)
Forward Transconductance (V_DS = 10 V, I_D = 5.0 A)
V_GS(th)
1.0
3.0
5.0
Vdc
V_DS(on)
1.0
3.0
5.0
Vdc
g_fs
5.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (V_DS = 50 V, V_GS = 0, f = 1.0 MHz)
C_iss
—
350
—
pF
Output Capacitance (V_DS = 50 V, V_GS = 0, f = 1.0 MHz)
C_oss
—
220
—
pF
Reverse Transfer Capacitance (V_DS = 50 V, V_GS = 0, f = 1.0 MHz)
C_rss
—
15
—
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
G_ps
(V_DD = 50 V, P_out = 150 W (PEP), I_DQ = 250 mA) f = 175 MHz
18
22
—
13
—
dB
—
Drain Efficiency
(V_DD = 50 V, P_out = 150 W (PEP), f = 30; 30.001 MHz,
I_D (Max) = 3.75 A)
η
40
45
—
%
Intermodulation Distortion (1)
(V_DD = 50 V, P_out = 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, I_DQ = 250 mA)
Load Mismatch
(V_DD = 50 V, P_out = 150 W (PEP), f1 = 30; 30.001 MHz,
I_DQ = 250 mA, VSWR 30:1 at all Phase Angles)
IMD_(d3)
IMD_(d11)
ψ
dB
—
– 32
– 30
—
– 60
—
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(V_DD = 50 V, P_out = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I_DQ = 3.0 A)
G_PS
—
23
—
dB
IMD_(d3)
—
– 50
—
IMD_{(d9 – 13)}
—
– 75
—
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
BIAS ⁺
0 – 12 V _–
RF
INPUT
L1
C5
C6 C7
R1
D.U.T.
T2
T1
R3 ^C2
C1
R2
C3
C8 ^L2
C4
+
C9
C10
–
+
50 V
–
RF
OUTPUT
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µ F Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µ F/100 V Electrolytic
REV 1
2
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µ H
L2 — Ferrite Bead(s), 2.0 µ H
R1, R2 — 51 Ω /1.0 W Carbon
R3 — 3.3 Ω /1.0 W Carbon (or 2.0 x 6.8 Ω /1/2 W in Parallel)
T1 — 9:1 Broadband Transformer Communication Concepts, Inc. RF800-9 material 43 or equiv.
T2 — 1:9 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, e _r = 5
Figure 1. 30 MHz Test Circuit