MA02303GJ_1 Datasheet, PDF (4/7 Pages) Tyco Electronics – RF Power Amplifier IC For 2.5 GHz ISM

RF Power Amplifier IC
For 2.5 GHz ISM
Typical Characteristics (Cont’d) (Measured data from process nominal devices)
MA02303GJ
V7
Output Power and Drain Current vs. Temperature
at V_DD = +3.2 V
35
30
25
20
15
10
5
0
-50
P = - 2 dBm
IN
V - 3.2 V
DD
F = 2450 MHz
0
50
Temperature, T (^oC)
S
Harmonics
350
300
250
I
200
DD
P
OUT
150
100
50
0
100
30
25
20
15
10
5
0
-5
-1 0
-1 5
-2 0
ƒ0
P IN = -2 d B m
ƒ0 = 2450M H z
V D D = 3 .3 V
2ƒ0
3ƒ0
4ƒ0
Output Power and Drain Current vs. Temperature
at V_DD = +3.6V
35
30
25
20
15
10
5
0
-50
P = - 2 dBm
IN
V - 3.6 V
DD
F = 2450 MHz
0
50
Temperature, T (^oC)
S
350
300
250
I
200
DD
P
OUT
150
100
50
0
100
Maximum Operating Temperature (Ts) to Maintain
<150 °C Junction Temperature.
6
5
4
3
2
1
0
-50
0
50
100
150
Temperature T (oC)
S
4
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