MA02303GJ_1 Datasheet, PDF (3/7 Pages) Tyco Electronics – RF Power Amplifier IC For 2.5 GHz ISM

RF Power Amplifier IC
For 2.5 GHz ISM
MA02303GJ
V7
Typical Characteristics (Measured data from process nominal devices)
Output Power, Drain Current and Efficiency
vs. Input Power
60
300
50
250
I
40
DD
200
30
150
20
10
0
-10
PAE
P
OUT
V
= 3.3 V
DD1, 2, 3
F = 2450 MHz
-5
0
P (dBm)
IN
100
50
0
5
Output Power, Drain Current and Efficiency vs.
Supply Voltage
Output Power, and Drain Current vs. Input Power for
Low Current “Bypass” Mode (V_DD1,2 = 3.3 V,
V_DD3 = 0.0 V)
12
300
V
= 3.3 V, V = 0.0 V
10
DD1, 2
DD3
250
F = 2450 MHz
8
PAE
6
P
OUT
200
I
DD
150
4
100
2
50
0
0
-10
-5
0
5
P (dBm)
IN
Output Power, Drain Current and Efficiency vs. V_DD1
for Power Control
60
0.35
50
PAE
0.30
40
P
OUT
30
0.25
I
DD
0.20
20
10
0
1
P = -2 dBm
IN
F = 2450 MHz
2
P
OUT
3
4
P (dBm)
IN
PAE
I
DD
5
0.15
0.10
0.05
Output Power, Input Return Loss and Efficiency
vs. Frequency
30
600
25
20
P
OUT
15
500
I
DD1
400
I
DD2
300
10
200
5
100
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V (V)
DD1
Output Power and Drain Current vs. Temperature
at V_DD = +3.0 V
60
50
40
PAE
P
OUT
30
20
P = - 2 dBm
IN
IRL
10
V = 3.3 V
DD
0
2200
2300
2400
2500
FREQUENCY (MHz)
0
-5
-10
-15
-20
-25
-30
2600
35
30
25
20
15
10
5
0
-50
P = - 2 dBm
IN
V - 3.0 V
DD
F = 2450 MHz
0
50
Temperature, T (^oC)
S
350
300
250
I
200
DD
P
OUT
150
100
50
0
100
3
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