NPT2022_14 Datasheet, PDF (7/11 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 100 W

NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Typical performance as measured in the 900 MHz evaluation board:
CW, V_DS = 48 V, I_DQ = 600 mA (unless noted)
Rev. V1
Gain vs. Output Power over Temperature
22.0
21.5
21.0
20.5
20.0
19.5
19.0
18.5
+25°C
-40°C
+85°C
18.0
30
35
40
45
50
55
Output Power (dBm)
Drain Efficiency vs. Output Power over Temperature
70
+25°C
60
-40°C
+85°C
50
40
30
20
10
0
30
35
40
45
50
55
Output Power (dBm)
Quiescent V_GS vs. Temperature
-1.20
-1.25
300 mA
600 mA
900 mA
-1.30
-1.35
-1.40
-1.45
-1.50
-1.55
-50
-25
0
25
50
Temperature (°C)
75
100
7
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