NPT2022_14 Datasheet, PDF (1/11 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 100 W

NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Features
 GaN on Si HEMT D-Mode Transistor
 Suitable for linear and saturated applications
 Tunable from DC - 2 GHz
 48 V Operation
 20 dB Gain @ 900 MHz
 60 % Drain Efficiency @ 900 MHz
 100 % RF Tested
 Standard plastic package with bolt down flange
 RoHS* Compliant and 260°C reflow compatible
Description
The NPT2022 GaN HEMT is a wideband transistor
optimized for DC - 2 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 100 W (50 dBm) in an
industry standard plastic package.
The NPT2022 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
1
3
Rev. V1
Ordering Information
Part Number
NPT2022
NPT2022-SMBPPR
Package
Bulk Quantity
Sample Board
Pin Configuration
Pin No.
1
2
3
Pin Name
RF_IN / V_G
RF_OUT / V_D
Pad¹
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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