NPT2022_14 Datasheet, PDF (5/11 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 100 W

NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
Rev. V1
V_GS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
L1
19.4 nH
RF_IN
C11
15 pF
C12
6.8 pF
R1
10 
NPT2022
C9
10 pF
C10
33 pF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
C5
1.0 mF
V_DS
L2
44 nH
C13
18 pF
C14
0.8 pF
C15
8.2 pF
RF_OUT
Description
Parts measured on evaluation board (30-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set V_GS to the pinch-off (V_P), typically -5 V.
2. Turn on V_DS to nominal voltage (48 V).
3. Increase V_GS until the I_DS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V_GS down to V_P.
3. Decrease V_DS down to 0 V.
4. Turn off V_GS.
5
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