NPT2022_14 Datasheet, PDF (4/11 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 100 W

NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Load-Pull Performance: V_DS = 48 V, I_DQ = 600 mA, T_C = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
Z_S
(MHz)
()
Z_L
P_SAT
()
(W)
500
1.3 + j0.8
5.8 + j2.5
152
G_SS
(dB)
26
Drain Efficiency
@ P_SAT (%)
71
900
1.1 - j1.3
5.0 + j2.8
139
22
70
1800
1.3 - j5.7
3.2 - j1.4
133
17
66
2000
1.4 - j6.3
2.3 - j2.3
119
16
66
Impedance Reference
Z_S and Z_L vs. Frequency
Z_S
Z_L
Gain vs. Output Power
28
Drain Efficiency vs. Output Power
80
26
24
22
500 MHz
20
900 MHz
1800 MHz
18
2000 MHz
16
70
500 MHz
60
900 MHz
1800 MHz
50
2000 MHz
40
30
20
10
14
25
30
35
40
45
50
55
4
Output Power (dBm)
0
25
30
35
40
45
50
55
Output Power (dBm)
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