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NPT2020_15 Datasheet, PDF (7/13 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 50 W
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Typical Performance as Measured in the 3.5 GHz Evaluation Board:
CW, VDS = 48 V, IDQ = 350 mA (unless noted)
Gain vs. Output Power over Temperature
14
13
12
Drain Efficiency vs. Output Power over Temperature
60
+25°C
50
-40°C
+55°C
40
11
30
10
+25°C
9
-40°C
+55°C
8
30
35
40
45
50
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.05
-1.10
-1.15
175 mA
350 mA
525 mA
-1.20
-1.25
-1.30
-1.35
-1.40
-50
-25
0
25
50
Temperature (°C)
75
100
20
10
0
30
35
40
45
50
Output Power (dBm)
7
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