NPT2020_15 Datasheet, PDF (2/13 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 50 W

NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
RF Electrical Specifications: T_A = 25 °C, V_DS = 48 V, I_DQ = 350 mA
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
Small Signal Gain
CW, 3.5 GHz
G_SS
-
14.5
-
dB
Saturated Output Power
CW, 3.5 GHz
P_SAT
-
48
-
dBm
Drain Efficiency at Saturation
CW, 3.5 GHz
_SAT
-
60
-
%
Power Gain
3.5 GHz, P_OUT = 50 W
G_P
12
13.5
-
dB
Drain Efficiency
3.5 GHz, P_OUT = 50 W

50
55
-
%
Ruggedness: Output Mismatch
All phase angles

VSWR = 10:1, No Device Damage
DC Electrical Characteristics: T_A = 25 °C
Parameter
Test Conditions
Symbol
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
Saturated Drain Current
V_GS = -8 V, V_DS = 160 V
V_GS = -8 V, V_DS = 0 V
V_DS = 48 V, I_D = 14 mA
V_DS = 48 V, I_D = 350 mA
V_DS = 2 V, I_D = 105 mA
V_DS = 7 V pulsed, pulse width 300 µs
I_DLK
I_GLK
V_T
V_GSQ
R_ON
I_D,MAX
Min.
-
-
-2.5
-2.1
-
-
Typ.
-
-
-1.5
-1.2
0.34
8.2
Max.
14
7
-0.5
-0.3
-
-
Units
mA
mA
V
V

A
2
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