NPT2020_15 Datasheet, PDF (4/13 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 50 W

NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Load-Pull Performance: V_DS = 48 V, I_DQ = 350 mA, T_C = 25 °C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
Z_S
(MHz)
(Ω)
Z_L
P_SAT
(Ω)
(W)
2700
1.6 - j7.2
2.9 + j2.3
65
G_SS
(dB)
16.2
Drain Efficiency
at P_SAT (%)
58
3100
1.5 - j8.6
2.9 + j0.6
64
16.1
55
3500
1.9 - j10.7
2.9 - j0.7
62
15.7
53
Impedance Reference
Z_S and Z_L vs. Frequency
Z_S
Z_L
Gain vs. Output Power
Drain Efficiency vs. Output Power
19
60
18
2700 MHz
50
3100 MHz
17
3500 MHz
40
16
15
30
14
2700 MHz
20
13
3100 MHz
3500 MHz
10
12
11
30
35
40
45
50
Output Power (dBm)
4
0
30
35
40
45
50
Output Power (dBm)
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