NPT2020_15 Datasheet, PDF (1/13 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 48 V, 50 W

NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Features
 GaN on Si HEMT Depletion Mode Transistor
 Suitable for Linear and Saturated Applications
 Tunable from DC - 3.5 GHz
 48 V Operation
 13.5 dB Gain at 3.5 GHz
 55 % Drain Efficiency at 3.5 GHz
 100 % RF Tested
 Standard package with bolt down flange
 RoHS* Compliant and 260°C reflow compatible
Description
The NPT2020 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 50 W (47 dBm) in an industry
standard surface mount package.
The NPT2020 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Rev. V1
Functional Schematic
RF_IN / V_G ¹
2 _{RFOUT / VD}
3
Flange
Ordering Information
Part Number
Package
NPT2020
NPT2020-SMBPPR
Bulk Quantity
Custom Sample Board¹
NPT2020-SMB2
1250-1850 MHz
Sample Board
1. When ordering, specify application requirements (frequency,
linearity, etc.)
Pin Configuration
Pin No.
Pin Name
Function
1
RF_IN / V_G
RF Input / Gate
2
RF_OUT / V_D
RF Output / Drain
3
Flange²
Ground / Source
2. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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