MA4SW210B-310B_15 Datasheet, PDF (2/7 Pages) M/A-COM Technology Solutions, Inc. – HMIC Silicon PIN Diode Switches

MA4SW210B-1
MA4SW310B-1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
MA4SW210B-1 (SPDT)
Electrical Specifications @ T_AMB = +25^oC, 20mA Bias current
Parameter
Insertion Loss
Isolation
Input Return
Loss
Switching Speed¹
Frequency
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
-
Minimum
55
47
40
36
Nominal
1.5
0.70
0.90
1.2
60
50
45
40
14
15
15
13.0
50
Maximum
1.8
1.0
1.2
1.8
Rev. V4
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
MA4SW310B-1 (SP3T)
Electrical Specifications @ T_AMB = +25^oC, 20mA Bias current
Parameter
Insertion Loss
Isolation
Input Return Loss
Switching Speed¹
Frequency
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
-
Minimum
54
47
40
36
Nominal
1.6
0.8
1.0
1.3
59
50
45
40
14
15
16
14
50
Maximum
2.0
1.1
1.3
1.9
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
Note:
1. Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC
output spiking network, R = 50 – 200Ω , C = 390 – 560pF.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
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