XP1026-BD_15 Datasheet, PDF (1/13 Pages) M/A-COM Technology Solutions, Inc. – Power Amplifier

XP1026-BD
Power Amplifier
27.0-32.0 GHz
Features
 Ka-Band 2W Power Amplifier
 21.0 dB Small Signal Gain
 +33.0 dBm Saturated Output Power
 +40.0 dBm Output Third Order Intercept (OIP3)
 100% On-Wafer RF, DC and Output Power
Testing
 100% Visual Inspection to MIL-STD-883 Method
2010
 RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s three stage 27.0-32.0 GHz GaAs
MMIC power amplifier has a small signal gain of
21.0 dB with +33 dBm saturated output power. This
MMIC uses M/A-COM Tech’s GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach
process. This device is well suited for Millimeter-
wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Ordering Information
Part Number
Package
XP1026-BD-000V
“V” - vacuum release
gel paks
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)¹
Absolute Max.
+6.0 VDC²
165,415,790 mA
+0.3 VDC
+22 dBm
-65 °C to +165 °C
-55 °C to +85 °C
175 °C
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize
lifetime.
2. Under pulsed bias conditions, under CW Psat conditions fur-
ther reduction in max supply voltage (~0.5V) is recommended.
1
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