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| LTC3411_15 Datasheet, PDF (3/24 Pages) Linear Technology – 1.25A, 4MHz, Synchronous Step-Down DC/DC Converter | |||
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LTC3411
ELECTRICAL CHARACTERISTICS The l denotes the speciï¬cations which apply over the full operating
temperature range, otherwise speciï¬cations are at TA = 25°C. VIN = 3.3V, RT = 324k unless otherwise speciï¬ed. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
VIN
Operating Voltage Range
IFB
Feedback Pin Input Current
VFB
Feedback Voltage
(Note 3)
2.625
5.5
±0.1
l 0.784
0.8
0.816
ÎVLINEREG
Reference Voltage Line Regulation
VIN = 2.7V to 5V
ÎVLOADREG
Output Voltage Load Regulation
ITH = 0.36, (Note 3)
l
ITH = 0.84, (Note 3)
l
gm(EA)
Error Ampliï¬er Transconductance
ITH Pin Load = ±5μA (Note 3)
IS
Input DC Supply Current (Note 4)
Active Mode
VFB = 0.75V, SYNC/MODE = 3.3V
Sleep Mode
VSYNC/MODE = 3.3V, VFB = 1V
Shutdown
VSHDN/RT = 3.3V
VSHDN/RT
Shutdown Threshold High
Active Oscillator Resistor
0.04
0.2
0.02
0.2
â0.02
â0.2
800
240
62
0.1
VIN â 0.6
324k
350
100
1
VIN â 0.4
1M
fOSC
Oscillator Frequency
RT = 324k
(Note 7)
0.85
1
1.15
4
fSYNC
ILIM
RDS(ON)
ISW(LKG)
Synchronization Frequency
(Note 7)
Peak Switch Current Limit
Top Switch On-Resistance (Note 6)
Bottom Switch On-Resistance (Note 6)
Switch Leakage Current
ITH = 1.3
VIN = 3.3V
VIN = 3.3V
VIN = 6V, VITH/RUN = 0V, VFB = 0V
0.4
4
1.6
2
0.11
0.15
0.11
0.15
0.01
1
VUVLO
PGOOD
RPGOOD
Undervoltage Lockout Threshold
Power Good Threshold
Power Good Pull-Down On-Resistance
VIN Ramping Down
VFB Ramping Up, SHDN/RT = 1V
VFB Ramping Down, SHDN/RT = 1V
2.375
2.5
2.625
6.8
â7.6
118
200
UNITS
V
μA
V
%/V
%
%
μS
μA
μA
μA
V
Ω
MHz
MHz
MHz
A
Ω
Ω
μA
V
%
%
Ω
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3411E is guaranteed to meet speciï¬ed performance from
0°C to 85°C. Speciï¬cations over the â40°C to 85°C operating termperature
range are assured by design, characterization and correlation with
statistical process controls. The LTC3411I is guaranteed to meet speciï¬ed
performance over the full â40°C to 125°C operating temperature range.
Note 3: The LTC3411 is tested in a feedback loop which servos VFB to the
midpoint for the error ampliï¬er (VITH = 0.6V).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: TJ is calculated from the ambient TA and power dissipation PD
according to the following formula:
LTC3411DD: TJ = TA + (PD ⢠43°C/W)
LTC3411MS: TJ = TA + (PD ⢠120°C/W)
Note 6: Switch on-resistance is guaranteed by correlation to wafer level
measurements.
Note 7: 4MHz operation is guaranteed by design but not production tested
and is subject to duty cycle limitations (see Applications Information).
Note 8: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the speciï¬ed maximum operating junction
temperature may impair device reliability.
3411fb
3
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