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LTC3814-5_15 Datasheet, PDF (13/30 Pages) Linear Technology – 60V Current Mode Synchronous Step-Up Controller
LTC3814-5
APPLICATIONS INFORMATION
When the controller is operating in continuous mode the
duty cycles for the top and bottom MOSFETs are given by:
Main Switch Duty Cycle = VOUT − VIN
VOUT
Synchronous Switch Duty Cycle = VIN
VOUT
The power dissipation for the main and synchronous
MOSFETs at maximum output current are given by:
PMAIN
=
DMAX


IO(MAX)
1 DMAX
2
(T
)RDS(ON)
+
1
2
VOUT2


IO(MAX)
1 DMAX
(RDR )(CMILLER )
•

INTVCC
1
–
VTH(IL)
+
1
VTH(IL)

(f)
PSYNC
=


1
1
DMAX
(IO(MAX))2(T
)
RDS(0N)
where ρT is the temperature dependency of RDS(ON), RDR
is the effective top driver resistance (approximately 2Ω at
VGS = VMILLER). VTH(IL) is the data sheet specified typical
gate threshold voltage specified in the power MOSFET
data sheet at the specified drain current. CMILLER is the
calculated capacitance using the gate charge curve from
the MOSFET data sheet and the technique described above.
Both MOSFETs have I2R losses while the bottom N-channel
equation includes an additional term for transition losses.
Both top and bottom MOSFET I2R losses are greatest at
lowest VIN, and the top MOSFET I2R losses also peak
during an overcurrent condition when it is on close to
100% of the period. For most LTC3814-5 applications,
the transition loss and I2R loss terms in the bottom
MOSFET are comparable, so best efficiency is obtained
by choosing a MOSFET that optimizes both RDS(ON) and
CMILLER. Since there is no transition loss term in the syn-
chronous MOSFET, however, optimal efficiency is obtained
by minimizing RDS(ON)—by using larger MOSFETs or
paralleling multiple MOSFETs.
Multiple MOSFETs can be used in parallel to lower
RDS(ON) and meet the current and thermal requirements
if desired. The LTC3814-5 contains large low impedance
drivers capable of driving large gate capacitances without
significantly slowing transition times. In fact, when driv-
ing MOSFETs with very low gate charge, it is sometimes
helpful to slow down the drivers by adding small gate
resistors (10Ω or less) to reduce noise and EMI caused
by the fast transitions.
Operating Frequency
The choice of operating frequency is a tradeoff between
efficiency and component size. Low frequency operation
improves efficiency by reducing MOSFET switching losses
but requires larger inductance and/or capacitance in order
to maintain low output ripple voltage.
The operating frequency of LTC3814-5 applications is
determined implicitly by the one-shot timer that controls
the on-time tOFF of the synchronous MOSFET switch.
The on-time is set by the current into the IOFF pin and the
voltage at the VOFF pin according to:
( ) tOFF
=
VVOFF
IIOFF
76pF
Tying a resistor ROFF from VOUT to the IOFF pin yields a syn-
chronous MOSFET on-time inversely proportional to VOUT.
This results in the following operating frequency and also
keeps frequency constant as VOUT ramps up at start-up:
f=
VIN
(Hz)
VVOFF • ROFF (76pF)
The VOFF pin can be connected to INTVCC or ground or
can be connected to a resistive divider from VIN. The VOFF
pin has internal clamps that limit its input to the one-shot
timer. If the pin is tied below 0.7V, the input to the one-
shot is clamped at 0.7V. Similarly, if the pin is tied above
2.4V, the input is clamped at 2.4V. Note, however, that
if the VOFF pin is connected to a constant voltage, the
operating frequency will be proportional to the input
voltage VIN. Figures 4a and 4b illustrate how ROFF relates
to switching frequency as a function of the input voltage
and VOFF voltage. To hold frequency constant for input
38145fc
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