SUM202MN Datasheet, PDF (4/9 Pages) KODENSHI KOREA CORP. – Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Electrical Characteristics for PNP Transistor
Characteristic
Symbol Test Condition
Off Characteristics
Collector-Base breakdown voltage
BV_CBO
Collector-Emitter breakdown voltage BV_CEO
Emitter-Base breakdown voltage
BV_EBO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
I_C=-50A, I_E=0
I_C=-1mA, I_B=0
I_E=-50A, I_C=0
V_CB=-15V, I_E=0
V_EB=-5V, I_C=0
On Characteristics
DC current gain ^(Note.8)
Base-Emitter on voltage ^(Note.8)
Collector-Emitter saturation
voltage ^(Note.8)
Transition frequency
h_FE*
V_BE(on)
V_CE(sat)
f_T
V_CE=-2V, I_C=-500mA
V_CE=-2V, I_C=-500mA
I_C=-3A, I_B=-150mA
V_CB=-5V, I_C=-500mA
Collector output capacitance
C_ob
8. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤ 2%.
V_CB=-10V, I_E=0, f=1MHz
SUM202MN
(Ta=25C)
Min. Typ. Max. Unit
-15
-
-12
-
-5
-
-
-
-
-
-
V
-
V
-
V
-1
A
-1
A
160
-
320
-
-
-
-1
V
-
-0.2 -0.5
V
-
150
-
MHz
-
-
50
pF
KSD-T6T001-001
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