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| SUM202MN Datasheet, PDF (3/9 Pages) KODENSHI KOREA CORP. – Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor | |||
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SUM202MN
Electrical Characteristics for P-Ch MOSFET
Characteristic
Symbol Test Condition
(Ta=25ï°C)
Min. Typ. Max. Unit
Static
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
On-State Drain Current (Note.6)
Drain-source on-resistance (Note.6)
BVDSS
VGS(th)
IDSS
IGSS
ID(ON)
RDS(ON)
ID=-250ïA, VGS=0
ID=-250ïA, VDS=VGS
VDS=-20V, VGS=0V
VDS=0V, VGS=ï±12V
VDS⤠-5.0V, VGS=-4.5V
VGS=-3.6V, ID=-1.0A
VGS=-2.5V, ID=-1.0A
-20
-
-
V
-0.6
-1.2
V
-
-
-1
ïA
-
-
ï±100 nA
-20
-
-
A
-
50
60
mï
-
70
83
Forward transfer conductance (Note.6) gfs
VDS=-10V, ID=-3.9A
-
12
-
S
Diode Forward Voltage (Note.6)
Dynamic (Note.7)
VSD
IS=-2.1A, VGS=0V
-
-0.8 -1.2
V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=-5V,
f=1MHz
-
710
-
-
400
-
pF
-
140
-
Turn-on delay time
td(on)
-
14
30
Rise time
Turn-off delay time
tr
td(off)
VDD=-10V, ID=-1.0A
RG=6â¦, RD=10â¦
VGS=-4.5V
-
22
55
ns
-
42
100
Fall time
tf
-
35
70
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
VDD=-10V, VGS=-4.5V
ID=-3.9A
Qgd
-
9.7
22
-
1.2
-
nC
-
3.6
-
5. Surface Mounted on FR4 Board using 1 inch square pad size (Cu area =1.27 inch square [1 oz] including traces).
6. Pulse Test : Pulse Width⤠300us, Duty Cycleâ¤2%.
7. Guaranteed by design, not subject to production testing.
KSD-T6T001-001
3
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