SUM202MN Datasheet, PDF (2/9 Pages) KODENSHI KOREA CORP. – Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Absolute maximum ratings for P-Ch MOSFET
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^(Note.1)
Drain current (Pulsed)
Continuous Source current
Total Power dissipation ^(Note.1)
Operating Junction and
Storage Temperature Range
V_DSS
V_GSS
I_D
T_A=25℃
T_A=85℃
I_DP
I_S
P_D
T_A=25℃
T_A=85℃
T_J , T_stg
SUM202MN
Rating
5sec
-5.3
-3.8
-5.3
2.5
1.3
Steady State
-20
12
-3.9
-2.8
20
-3.9
1.3
0.7
-55 ~ 150
(Ta=25C)
Unit
V
V
A
A
A
A
W
W
C
Absolute maximum ratings for PNP Transistor
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current – continuous
Peak Collector current
V_CBO
V_CEO
V_EBO
I_C
I_CM
Rating
-15
-12
-5
-5
-15
(Ta=25C)
Unit
V
V
V
A
A
Thermal Characteristics for P-Ch MOSFET
Characteristic
Junction to Ambient ^(Note.5)
Junction to Foot (Drain)
Symbol
R_TH(J-A)
R_TH(J-F)
Condition
t≤ 5 sec
Steady State
Steady State
Typ.
40
80
15
Max.
50
95
20
Unit
℃/W
℃ /W
Thermal Characteristics for PNP Transistor
Characteristic
Symbol
Max.
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Thermal Resistance, Junction to Ambient
P_D ^(Note.2)
R_TH(J-A) ^(Note.2)
P_D ^(Note.3)
R_TH(J-A) ^(Note.3)
635
200
1.35
90
Thermal Resistance, Junction to Lead #1
Total Device Dissipation (Single Pulse < 10 sec)
R_TH(J-L)
P_Dsingle ^(Note.3&4)
15
2.75
Junction and Storage Temperature Range
T_J, T_stg
-55 ~ 150
1. Surface Mounted on FR4 Board using 1in square pad size (Cu area =1.27 in square [1 oz] including traces)
2. FR−4 @ 100 mm2, 1 oz copper traces.
3. FR−4 @ 500 mm2, 1 oz copper traces.
4. Thermal response.
Unit
mW
℃ /W
W
℃/W
℃ /W
W
℃
KSD-T6T001-001
2