SUM202MN Datasheet, PDF (1/9 Pages) KODENSHI KOREA CORP. – Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

SUM202MN
P-Channel MOSFET + PNP BJT
Integrated Power MOSFET
with PNP Low V_CE(sat) Switching Transistor
DFN-8
This integrated device represents a new level of safety and
8
board−space reduction by combining the 20V P−Channel FET with a
PNP Silicon Low V_CE(sat) switching transistor. This newly integrated
product provides higher efficiency and accuracy for battery powered
portable electronics.
Features
• Low R_DS(on) (MOSFET) and Low V_CE(sat) (Transistor)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive (MOSFET)
• Performance DFN Package
BV_DSS
-20V
BV_CEO
1
MOSFET
R_DS(ON) Typ.
48mΩ
@ VGS=-4.5V
65mΩ
@ VGS=-2.5V
PNP BJT
BV_EBO.
• This is a Halogen−Free Device
-12V
-5V
I_D Max
-5.3A
I_C Max
-5A
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
Ordering Information
Device
Marking Package
SUM202MN SUM202
DFN8
Marking Diagram
1
SUM202
YMM
Column 1 : Device Code
Column 2 : Date Code (year, month)
Simple Schematic
1
2
3
4
PIN Connection
8
Emitter 8
1 N/C
Collector
7
Base 7
2 Collector
6
N/C 6
3 Source
Drain
5
Gate 5
4 _Drain
Bottom View
KSD-T6T001-001
1