SI9926DY-S Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
MOSFET
Dual N-Channel MOSFET
SI9926DY (KI9926DY)
■ Typical Characterisitics
5
I_D = 3A
4
3
V_DS = 5V
10V
15V
1000
800
600
C_ISS
f = 1MHz
V_GS = 0 V
2
400
1
0
0
2
4
6
8
10
Q_g, GATE CHARGE (nC)
200
0
0
C_OSS
C_RSS
4
8
12
16
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = 10V
0.1
SINGLE PULSE
R _JA = 135^oC/W
T_A = 25^oC
100 s
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
.
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
R _JA = 135°C/W
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
R _JA(t) = r(t) + R _JA
R _JA = 135°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R _JA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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