SI9926DY-S Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
MOSFET
Dual N-Channel MOSFET
SI9926DY (KI9926DY)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
(Note.1)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=VGS , ID=250μA (Note.1)
VGS=4.5V, ID=6.5A
VGS=4.5V, ID=6.5A TJ=125℃
VGS=2.5V, ID=5.4A
VGS=4.5V, VDS=5V (Note.1)
VDS=5V, ID=3A (Note.1)
VGS=0V, VDS=10V, f=1MHz
VGS=4.5V, VDS=10V, ID=3A (Note.1)
VGS=4.5V, VDS=10 V, ID=1A,RG=6Ω
(Note.1)
IS=1.3A,VGS=0V (Note.1)
Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
Min Typ Max Unit
20
V
1 μA
±100 nA
0.5
1.5 V
30
50 mΩ
43
15
A
11
S
700
175
pF
85
7 10
1.2
nC
1.9
8 16
10 18
ns
18 29
5 10
1.3 A
1.2 V
■ Marking
Marking
9926
KA****
2 _{www.kexin.com.cn}