SI9926DY-S Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
Dual N-Channel MOSFET
SI9926DY (KI9926DY)
MOSFET
■ Features
● VDS (V) = 20V
● ID = 6.5 A (VGS = 4.5V)
● RDS(ON) ＜ 30mΩ (VGS = 4.5V)
● RDS(ON) ＜ 43mΩ (VGS = 2.5V)
● Low gate charge
5
4
6
Q1
3
7
2
8
Q2
1
SOP-8
1.50 0.15
1 Source
2 Gate
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note.1)
Pulsed Drain Current
Power Dissipation for Dual Operation
(Note.1)
Power Dissipation for Single Operation (Note.2)
(Note.3)
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Note.1: 78°/W when mounted on a 0.5in² pad of 2 oz copper
Note.2: 125°/W when mounted on a 0.02 in ² pad of 2 oz copper
Note.3: 135°/W when mounted on a minimum pad.
Rating
20
±10
6.5
20
2
1.6
1
0.9
78
40
150
-55 to 150
Unit
V
A
W
℃/W
℃
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