SI9926DY-S Datasheet, PDF (3/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
MOSFET
Dual N-Channel MOSFET
SI9926DY (KI9926DY)
■ Typical Characterisitics
20
V_GS = 4.5V
3.5V
15
3.0V
2.5V
10
2.0V
5
1.5V
0
0
0.5
1
1.5
2
V_DS, DRAIN-SOURCE VOLTAGE (V)
3
2.5
V_GS = 2.0V
2
2.5V
1.5
3.0V
3.5V _4.0V
1
4.5V
0.5
0
5
10
15
20
I_D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.6
I_D = 3A
V_GS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
20
V_DS = 5V
15
10
T_A = -55^oC
25
125^oC
5
0
0.5
1
1.5
2
2.5
3
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
I_D = 1.5 A
0.08
0.06
0.04
T_A = 125^oC
0.02
T_A = 25^oC
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
T_A = 125^oC
0.1
25^oC
-55^oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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