IRFR1N60A Datasheet, PDF (6/7 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
200
ID
TOP
0.65A
0.9A
160
BOTTOM 1.4A
120
80
40
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
770
750
730
710
690
670
0.0
0.4
0.8
1.2
I _av , Avalanche Current (A)
Fig. 12d - Basic Gate Charge Waveform
A
1.6
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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