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IRFR1N60A Datasheet, PDF (2/7 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
110
50
3.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 0.84 Ab
VDS = 50 V, ID = 0.84 A
600
2.0
-
-
-
-
0.88
-
-
V
-
4.0
-
± 100 nA
-
25
µA
-
250
-
7.0
Ω
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 480 V, f = 1.0 MHz
-
VDS = 0 V to 480 Vc
-
-
VGS = 10 V
ID = 1.4 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 1.4 A,
-
RG = 2.15 Ω, RD = 178 Ω, see fig. 10b
-
-
229
-
32.6
-
2.4
-
pF
320
-
11.5
-
130
-
-
14
-
2.7
nC
-
8.1
9.8
-
14
-
ns
18
-
20
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
1.4
A
-
-
5.6
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb
-
-
1.6
V
trr
-
290
440
ns
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/µsb
Qrr
-
510 760 µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
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