IRFR1N60A Datasheet, PDF (4/7 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
10000
1000
100
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd, C _dsSHORTED
C _rss = C _gd
C _oss= C _ds + C _gd
C_iss
Coss
10
C_rss
1
A
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 1.4A
V_DS = 480V
16
V_DS = 300V
V_DS = 120V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8 10 12 14
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
T_J = 150° C
1
T_J = 25° C
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
10us
100us
1
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
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