IRFR1N60A Datasheet, PDF (1/7 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Max.) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
7.0
14
2.7
8.1
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback
ORDERING INFORMATION
Package
Lead (Pb)-free
DPAK (TO-252)
IRFR1N60APbF
SiHFR1N60A-E3
DPAK (TO-252)
IRFR1N60ATRLPbF^a
SiHFR1N60ATL-E3^a
SnPb
IRFR1N60A
-
SiHFR1N60A
-
Note
a. See device orientation.
DPAK (TO-252)
IRFR1N60ATRPbF^a
SiHFR1N60AT-E3^a
IRFR1N60ATR^a
SiHFR1N60AT^a
DPAK (TO-252)
IRFR1N60ATRRPbF^a
SiHFR1N60ATR-E3^a
-
-
IPAK (TO-251)
IRFU1N60APbF
SiHFU1N60A-E3
IRFU1N60A
SiHFU1N60A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
LIMIT
600
± 30
1.4
0.89
5.6
0.28
93
1.4
3.6
36
3.8
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
- 55 to + 150
°C
300^d
www.kersemi.com
1