IRFB4019PBF Datasheet, PDF (5/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

0.5
ID = 10A
0.4
0.3
0.2
0.1
0.0
4
TJ = 125°C
TJ = 25°C
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
IRFB4019PBF
300
ID
250
TOP
1.3A
2.3A
BOTTOM 10A
200
150
100
50
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. On-Resistance Vs. Gate Voltage
100
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
80
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 10A
60
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T_jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as neither
Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
40
Figures 17a, 17b.
4. P_{D (ave)} = Average power dissipation per single
avalanche pulse.
5. B_V = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20
6. I_av = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
0
25
50
75
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
T_jmax (assumed as 25°C in Figure 14, 15).
t_{av =} Average time in avalanche.
D = Duty cycle in avalanche = t_av ·f
Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)
P_{D (ave)} = 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC
I_av = 2DT/ [1.3·BV·Z_th]
E_{AS (AR)} = P_{D (ave)}·t_av
2014-8-13
5
www.kersemi.com