IRFB4019PBF Datasheet, PDF (4/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

100
10
TJ = 175°C
1
TJ = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20
16
12
8
4
0
25
50
75
100 125 150 175
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
10
IRFB4019PBF
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
DC
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
4.0
ID = 50µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1 _{D = 0.50}
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= τi/Ri
R_2R2
τ_{2 τ2}
R _{3R 3}
Ri (°C/W) τι (sec)
τ_{Cτ 0.535592 0.000222}
τ_{3 τ3}
0.913763 0.001027
0.432454 0.006058
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-13
4
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