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| IRFB4019PBF Datasheet, PDF (2/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET | |||
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IRFB4019PBF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
150 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.19 âââ V/°C Reference to 25°C, ID = 1mA
âââ 80
95
e m⦠VGS = 10V, ID = 10A
3.0 âââ 4.9
V VDS = VGS, ID = 50µA
âââ -13 âââ mV/°C
âââ âââ 20
µA VDS = 150V, VGS = 0V
âââ âââ 250
VDS = 150V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
14 âââ âââ
S VDS = 10V, ID = 10A
âââ 13 20
âââ 3.3 âââ
âââ 0.95 âââ
âââ 4.1 âââ
âââ 4.7 âââ
VDS = 75V
nC VGS = 10V
ID = 10A
See Fig. 6 and 19
âââ 5.1 âââ
âââ 2.4 âââ
âââ 7.0 âââ
â¦
Ãe VDD = 75V, VGS = 10V
âââ 13 âââ
ID = 10A
âââ 12 âââ ns RG = 2.4â¦
âââ 7.8 âââ
âââ 800 âââ
âââ 74 âââ
âââ 19 âââ
VGS = 0V
pF VDS = 50V
Æ = 1.0MHz,
See Fig.5
âââ 99 âââ
âââ 4.5 âââ
VGS = 0V, VDS = 0V to 120V
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
G
âââ 7.5 âââ
from package
S
and center of die contact
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
EAR
Ãg Avalanche Current
g Repetitive Avalanche Energy
Typ.
Max.
âââ
73
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 17
MOSFET symbol
âââ âââ 51
A showing the
integral reverse
âââ âââ 1.3
âââ 64 96
âââ 160 240
p-n junction diode.
e V TJ = 25°C, IS = 10A, VGS = 0V
ns TJ = 25°C, IF = 10A
e nC di/dt = 100A/µs
2014-8-13
2
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