IRFB4019PBF Datasheet, PDF (1/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

IRFB4019PBF
D
TO-220AB
Features
• Key Parameters Optimized for Class-D Audio
G
Amplifier Applications
S
• Low R_DSON for Improved Efficiency
• Low Q_G and Q_SW for Better THD and Improved
Efficiency
• Low Q_RR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Key Parameters
V_DS
150
V
Ruggedness
R_DS(ON) typ. @ 10V
80
m:
• Can Deliver up to 200W per Channel into 8Ω Load in
Q_g typ.
13
nC
Half-Bridge Configuration Amplifier
Q_sw typ.
5.1
nC
R_G(int) typ.
2.4
Ω
T_J max
175
°C
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
150
±20
17
12
51
80
40
0.5
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_θJC
Junction-to-Case f
R_θCS
R_θJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Typ.
–––
0.50
–––
Max.
1.88
–––
62
Units
°C/W
2014-8-13
1
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