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KSM5800 Datasheet, PDF (4/7 Pages) Kersemi Electronic Co., Ltd. – High performance trench technology for extermly low Rdson
KSM5800
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
2.4
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250µA
-50 0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
103
20µs
102
100µs
2.0
1.6
1.2
0.8
0.4
-80
* Notes :
1. VGS = 10V
2. ID = 80A
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
125
CURRENT LIMITED
100
BY PACKAGE
75
Operation in This Area
101 is Limited by R DS(on)
* Notes :
100
100
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
101
VDS, Drain-Source Voltage [V]
1ms
10ms
DC
102
50
25
0
25 50 75 100 125 150 175
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1E-3
10-5
Single pulse
PDM
t1
t2
* Notes :
1. ZθJC(t) = 0.62oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
10-2
10-1
100
101
102
t , Square Wave Pulse Duration [sec]
1
2014-7-1
4
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