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KSM5800 Datasheet, PDF (2/7 Pages) Kersemi Electronic Co., Ltd. – High performance trench technology for extermly low Rdson
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Electrical Characteristics TC= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current, Forward
ID = 250µA, VGS = 0V, TJ =25oC
VDS = 48V
VGS = 0V
TJ = 150°C
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On Resistance
VGS = VDS, ID = 250µA
VGS = 10V , ID = 80A
VGS =4.5V , ID = 80A
VGS = 5V , ID = 80A
VGS =10V, ID = 80A
TJ = 175oC
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V,VGS = 0V
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDS = 30V
ID = 80A
Ig = 1mA
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tf
Turn-Off Fall Time
tOFF
Turn-Off Time
VDD = 30V, ID = 80A
VGS = 10V, RGEN = 1.5Ω
Drain-Source Diode Characteristics
VSD
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1: L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC
VGS = 0V, ISD = 80A
VGS = 0V, ISD = 40A
VGS = 0V, ISD = 60A
dIF/dt = 100A/µs
Min
60
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1.0
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KSM5800
Typ
Max Units
--
--
V
--
1
µA
--
500 µA
--
±100 nA
--
2.5
V
4.6
6.0
mΩ
5.9
7.2
mΩ
5.6
7.0
mΩ
10.4 12.6 mΩ
6890 9160
pF
750 1000
pF
295
445
pF
1.2
--
Ω
112
145
nC
58
--
nC
7.0
--
nC
23
--
nC
13
--
nC
18
--
nC
37
85
ns
18
46
ns
19
47
ns
55
120
ns
9
28
ns
64
138
ns
--
1.25
V
--
1.0
V
58
--
ns
106
--
nC
2014-7-1
2
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