KSM5800 Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – High performance trench technology for extermly low Rdson

KSM5800
Features
• R_DS(on) = 4.6mΩ (Typ.), V_GS = 10V, I_D = 80A
• High performance trench technology for extermly low Rdson
• Low gate Charge
• High power and current handing capability
• RoHs Compliant
TO-220
Applications
• Motor/ Body Load Control
• Power Train Management
• Injection Systems
• DC-AC Converters and UPS
D
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
-Continuous (T_A = 25^oC)
- Pulsed
Single Pulsed Avalanche Energy
(Note 1)
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
*Drain current limited by package
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance , Junction to Case
Thermal Resistance , Junction to Ambient, 1in² copper pad area
Thermal Resistance , Junction to Ambient
Package Marking and Ordering Information
Device Marking
KSM580
Device
KSM5800
Package
TO220
Reel Size
--
Ratings
60
±20
80
80*
14
320
652
242
1.61
-55 to +175
Units
V
V
A
A
A
A
mJ
W
W/°C
°C
0.62
°C/W
43
°C/W
62.5
°C/W
Tape Width
--
Quantity
50
2014-7-1
1
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