KSM5800 Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – High performance trench technology for extermly low Rdson

KSM5800
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
* Notes :
1. 250µs Pulse Test
2. T_C = 25^oC
100
Figure 2. Transfer Characteristics
1000
V_DS = 6V
100
150^oC
V_GS
Top : 10.0 V
5.0 V
4.5 V
10
4.0 V
3.5 V
5
0.03
Bottom : 3.0 V
0.1
1
3
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5.5
10
25^oC
1
-55^oC
0.1
1
2
3
4
5
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1000
V_GS = 0V
5.0
V_GS = 10V
4.5
4.0
0
V_GS = 20V
* Note : T_J = 25^oC
40
80
120
160
200
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
9000
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
7500
6000
4500
3000
1500
100
10^-1
C_oss
C_rss
* Note:
1. V_GS = 0V
2. f = 1MHz
10⁰
10¹
30
V_DS, Drain-Source Voltage [V]
100
150^oC
25^oC
10
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 25V
V_DS = 35V
8
V_DS = 50V
6
4
2
* Note : I_D = 80A
0
0
20 40 60 80 100 120
Q_g, Total Gate Charge [nC]
2014-7-1
3
www.kersemi.com