KSM22N50N Datasheet, PDF (4/7 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET

KSM22N50N
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
Figure 8. On-Resistance Variation vs.
Temperature
3.0
2.5
2.0
1.0
1.5
0.9
0.8
-75
*Notes:
1. V_GS = 0V
2. I_D = 250µA
-25
25
75
125
175
T_J, Junction Temperature [^oC]
1.0
0.5
0.0
-75
*Notes:
1. V_GS = 10V
2. I_D = 11A
-25
25
75
125
175
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
- FDP22N50N
200
100
10µs
100µs
1ms
10
10ms
DC
Operation in This Area
1 ^{is Limited by R DS(on)}
0.1
0.01
1
*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
10
100
800
V_DS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
Figure 10. Transient Thermal Response Curve - FDP22N50N
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01 ^0.01
Single pulse
0.003
10^-5
10^-4
P_DM
t₁
t₂
*Notes:
1. Z_θJC(t) = 0.4^oC/W Max.
2. Duty Factor, D= t₁/t₂
3. T_JM - T_C = P_DM * Z_θJC(t)
10^-3
10^-2
10^-1
1
Rectangular Pulse Duration [sec]
10
10²
2014-7-1
4
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