KSM22N50N Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET

Typical Performance Characteristics
KSM22N50N
Figure 1. On-Region Characteristics
50
V_GS = 15.0V
10.0V
8.0 V
7.0 V
10
6.5 V
6.0 V
5.5 V
1
0.2
0.05
*Notes:
1. 250µs Pulse Test
2. T_C = 25^oC
0.1
1
10
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.30
Figure 2. Transfer Characteristics
100
*Notes:
1. V_DS = 20V
2. 250µs Pulse Test
10
150^oC
25^oC
-55^oC
1
0.1
3
4
5
6
7
8
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.25
0.20
V_GS = 10V
V_GS = 20V
0.15
0
*Note: T_J = 25^oC
10
20
30
40
50
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4000
3000
C_oss
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
*Note:
1. V_GS = 0V
2. f = 1MHz
2000
1000
C_rss
0
0.1
1
10
30
V_DS, Drain-Source Voltage [V]
150^oC
25^oC
10
*Notes:
1. V_GS = 0V
2. 250µs Pulse Test
1
0.2
0.6
1.0
1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 100V
8
V_DS = 250V
V_DS = 400V
6
4
2
*Note: I_D = 22A
0
0
10
20
30
40
50
Q_g, Total Gate Charge [nC]
2014-7-1
3
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