KSM22N50N Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET

KSM22N50N
N-Channel MOSFET
500V, 22A, 0.22Ω
Features
• R_DS(on) = 0.185Ω ( Typ.)@ V_GS = 10V, I_D = 11A
• Low gate charge ( Typ. 49nC)
• Low C_rss ( Typ. 24pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220
D
S
KSM22N50N
500
±30
22
13.2
88
1000
22
31.25
10
312.5
2.5
-55 to +150
300
KSM22N50N
0.4
0.5
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
2014-7-1
1
www.kersemi.com