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KSM22N50N Datasheet, PDF (2/7 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET
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KSM22N50N
Package Marking and Ordering Information
Device Marking
KSM22N50N
Device
KSM22N50N
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V,
500
ID = 250µA, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
3.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 11A
-
gFS
Forward Transconductance
VDS = 20V, ID = 11A
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 22A
VGS = 10V
-
-
-
-
-
(Note 4)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 22A
RG = 4.7Ω
-
-
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 22A
-
trr
Reverse Recovery Time
VGS = 0V, ISD = 22A
-
Qrr
Reverse Recovery Charge
dIF/dt = 100A/µs
-
Typ.
-
0.45
-
-
-
-
0.185
24.4
2456
351
24
49
15
19
22
50
48
35
-
-
-
472
6.5
Max. Units
-
-
1
10
±100
V
V/oC
µA
nA
5.0
V
0.22
Ω
-
S
3200 pF
460 pF
50
pF
65
nC
-
nC
-
nC
55
ns
110
ns
110
ns
80
ns
22
A
88
A
1.4
V
-
ns
-
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 22A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
2014-7-1
2
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