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JCS9N50T Datasheet, PDF (6/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS9N50T
Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes:
1. VGS=0V
2. ID=250μA
0.8
-75 -50 -25
0
25
50
75 100 125 150
T j [℃ ]
Maximum Safe Operating Area
For JCS9N50CT
Operation in This Area
102
is Limited by RDS(ON)
10μs
100μs
101
1ms
10ms
100
10-1
100
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
100ms
DC
101
102
V DS Drain-Source Voltage [V]
Maximum Drain Current
vs. Case Temperature
10
On-Resistance Variation
vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Notes:
0.5
1. VGS=10V
2. ID=4.5A
0.0
-75 -50 -25
0
25
50
75 100 125 150
Tj [℃ ]
Maximum Safe Operating Area
For JCS9N50FT
Operation in This Area
102
is Limited by RDS(ON)
101
100
10-1
100
10μs
100μs
1ms
10ms
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
100ms
DC
101
102
103
VDS Drain-Source Voltage [V]
8
6
4
2
0
25
50
75
100
125
150
TC Case Temperature [℃]
版本：201010C
6/10
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