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JCS9N50T Datasheet, PDF (5/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS9N50T
On-Region Characteristics
VGS
Top 15V
10V
9V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Notes:
1
1. 250μs pulse test
2. TC=25℃
1
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
VGS=10V
0.90
0.85
0.80
0.75
VGS=20V
0.70
0.65
Note:Tj=25℃
0.60
0
2
4
6
8
10
12
14
16
18
ID [A]
Capacitance Characteristics
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2
4
6
8
10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
25℃
1
150℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD [V]
Gate Charge Characteristics
3x103
12
Ciss=Cgs+Cgd(Cds=shorted)
VDS=400V
Coss=Cds+Cgd
10
VDS=250V
Crss=Cgd
2x103
8
VDS=100V
6
1x103
4
2
0
10-1
100
101
V DS Drain-Source Voltage [V]
0
0
10
20
30
Qg Toltal Gate Charge [nC]
版本:201010C
5/10