English
Language : 

JCS650 Datasheet, PDF (6/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET
◁
R
JCS650
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
vs. Temperature
1.2
4.0
3.5
1.1
3.0
2.5
1.0
2.0
0.9
Notes:
1. VGS=0V
2. ID=250μA
0.8
-75 -50 -25
0
25
50
75 100 125 150
T j [℃]
1.5
1.0
Notes:
0.5
1. VGS=10V
2. ID=14A
0.0
-75 -50 -25
0
25
50
75 100 125 150
T j [℃]
Maximum Safe Operating Area
For JCS650C
Operation in This Area
102
is Limited by RDS(ON)
10μs
100μs
101
100
10-1
100
1ms
10ms
100ms
Note:
DC
1 TC=25 ℃
2 TJ=150 ℃
3 Single Pulse
101
102
VD S Drain-Source Voltage [V]
Maximum Safe Operating Area
For JCS650F
Operation in This Area
102
is Limited by RDS(ON)
10μs
101
100
10-1
100
100μs
1ms
10ms
100ms
Note:
1 TC=25 ℃
DC
2 TJ=150 ℃
3 Single Pulse
101
102
VD S Drain-Source Voltage [V]
Maximum Drain Current
vs. Case Temperature
30
25
20
15
10
5
0
25
50
75
100
125
150
TC Case Temperature [℃]
版本：201008A
6/10
 ▷