JCS650 Datasheet, PDF (5/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS650
On-Region Characteristics
Transfer Characteristics
V_GS
Top 15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
10
150℃
1
25℃
10
Notes:
1. 250μs pulse test
0.1
2. T_C=25℃
Notes:
1.250μs pulse test
2.V_DS=40V
1
10
2
4
6
8
10
V_DS [V]
V_GS Gate-Source Voltage[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
0.10
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
0.09
V_GS=10V
0.08
150℃
0.07
1
V_GS=20V
0.06
Note:T_j=25℃
25℃
0.05
0
2
4
6
8 10 12 14 16 18 20 22
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
I_D [A]
V _{S D} Source-Drain voltage[V]
Capacitance Characteristics
8x10³
7x10³
6x10³
5x10³
4x10³
3x10³
2x10³
1x10³
0
10^-1
C_iss=C_gs+C_gd(C_ds=shorted)
C_oss=C_ds+C_gd
C_rss=C_gd
10⁰
10¹
V _DS Drain-Source Voltage [V]
Gate Charge Characteristics
12
V_DS=160V
10
V_DS=100V
8
V_DS=40V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120
Q_g Toltal Gate Charge [nC]
版本：201008A
5/10