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JCS650 Datasheet, PDF (4/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
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JCS650
çµç¹æ§ ELECTRICAL CHARACTERISTICS
å¼å
³ç¹æ§ Switching Characteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
td(on)
tr
VDD=100V,ID=28A,RG=25⦠- 28 69 ns
ï¼note 4ï¼5ï¼
- 251 494 ns
延è¿æ¶é´ Turn-Off delay time
td(off)
- 309 617 ns
ä¸éæ¶é´ Turn-Off Fall time
tf
- 220 412 ns
æ
æçµè·æ»é Total Gate Charge Qg
VDS =160V ,
- 103 136 nC
æ
ï¼æºçµè· Gate-Source charge Qgs
æ
ï¼æ¼çµè· Gate-Drain charge Qgd
ID=28A
- 16 - nC
VGS =10V ï¼note 4ï¼5ï¼ - 53 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
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Maximum Continuous Drain
-Source Diode Forward Current
IS
- - 28 A
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Maximum Pulsed Drain-Source
Diode Forward Current
ISM
- - 112 A
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Drain-Source Diode Forward
VSD
VGS=0V, IS=28.0A
Voltage
- - 1.40 V
ååæ¢å¤æ¶é´
Reverse recovery time
trr
VGS=0V, IS=28.0A
ååæ¢å¤çµè·
Reverse recovery charge
dIF/dt=100A/μs (note 4)
Qrr
çç¹æ§ THERMAL CHARACTERISTIC
- 218 - ns
- 1.91 - μC
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Parameter
æ大
å
符å·
Max
ä½
Symbol
JCS650C
JCS650F
Unit
ç»å°ç®¡å£³ççé»
Thermal Resistance, Junction to Case
Rth(j-c)
0.79
2.48
â/W
ç»å°ç¯å¢ççé»
Rth(j-A)
Thermal Resistance, Junction to Ambient
62.5
62.5
â/W
注éï¼
1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
2ï¼L=1.1mH, IAS=28A, VDD=50V, RG=25 â¦,èµ·å§ç»
温 TJ=25â
3ï¼ISD â¤28A,di/dt â¤200A/μs,VDDâ¤BVDSS,èµ·å§ç»æ¸©
TJ=25â
4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
Notes:
1ï¼Pulse width limited by maximum junction
temperature
2ï¼L=1.1mH, IAS=28A, VDD=50V, RG=25 â¦,Starting
TJ=25â
3ï¼ISD â¤28A,di/dt â¤200A/μs,VDDâ¤BVDSS, Starting
TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs,Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
çæ¬ï¼201008A
4/10
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