JCS830 Datasheet, PDF (5/14 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS830
On-Region Characteristics
Transfer Characteristics
V_GS
Top 15V
10V
8V
10
7V
6.5V
6V
5.5V
Bottom 5V
Notes：
1
1. 250μs pulse test
2. T_C=25℃
1
10
V_DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
10
25℃
150℃
1
Notes：
1.250μs pulse test
2.V_DS=40V
0.1
2
4
6
8
10
V_GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2.0
1.9
1.8
1.7
V_GS=10V
1.6
1.5
V_GS=20V
1.4
1.3
1.2
Note ：T_j=25℃
1.1
0
2
4
6
8
I_D [A]
Capacitance Characteristics
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. V_GS=0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V _SD [V]
Gate Charge Characteristics
12
V =400V
DS
10
V =250V
DS
8
V =100V
DS
6
4
2
0
0
4
8
12 16 20 24 28 32 36
Q Toltal Gate Charge [nC]
g
版本：201007A
5/14