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JCS830 Datasheet, PDF (4/14 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTICS
å¼å
³ç¹æ§ Switching Characteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
td(on)
tr
VDD=250V,ID=4.5A,RG=25â¦
ï¼note 4ï¼5ï¼
延è¿æ¶é´ Turn-Off delay time
td(off)
ä¸éæ¶é´ Turn-Off Fall time
tf
æ
æçµè·æ»é Total Gate Charge Qg
æ
ï¼æºçµè· Gate-Source charge Qgs
æ
ï¼æ¼çµè· Gate-Drain charge
Qgd
VDS =400V ,
ID=4.5A
VGS =10V ï¼note 4ï¼5ï¼
JCS830
- 15 40 ns
- 40 90 ns
- 85 180 ns
- 45 100 ns
- 32 44 nC
- 3.7 - nC
- 15 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
æ£åæ大è¿ç»çµæµ
Maximum Continuous Drain
-Source Diode Forward Current
æ£åæ大èå²çµæµ
IS
- - 4.5 A
Maximum Pulsed Drain-Source
Diode Forward Current
æ£ååé
ISM
- - 18 A
Drain-Source Diode Forward
VSD
VGS=0V, IS=4.5A
- - 1.4 V
Voltage
ååæ¢å¤æ¶é´
Reverse recovery time
ååæ¢å¤çµè·
Reverse recovery charge
trr
VGS=0V, IS=4.5A
- 305 - ns
dIF/dt=100A/μs (note 4)
Qrr
- 2.6 - μC
çç¹æ§ THERMAL CHARACTERISTIC
项ç®
Parameter
æ大
符å·
åä½
Max
Symbol
Unit
JCS830V/R JCS830S/B/C JCS830F
ç»å°ç®¡å£³ççé»
Thermal Resistance, Junction to Case
Rth(j-c)
2.05
1.71
3.31 â/W
ç»å°ç¯å¢ççé»
Rth(j-A)
110
Thermal Resistance, Junction to Ambient
62.5
62.5 â/W
注éï¼
1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
2ï¼L=24mH, IAS=4.5A, VDD=50V, RG=25 â¦,èµ·å§ç»
温 TJ=25â
3ï¼ISD â¤4.5A,di/dt â¤300A/μs,VDDâ¤BVDSS,èµ·å§ç»æ¸©
TJ=25â
4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
Notes:
1ï¼Pulse width limited by maximum junction
temperature
2ï¼L=24mH, IAS=4.5A, VDD=50V, RG=25 â¦,Starting
TJ=25â
3ï¼ISD â¤4.5A,di/dt â¤300A/μs,VDDâ¤BVDSS, Starting
TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs,Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
çæ¬ï¼201007A
4/14
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