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JCS830 Datasheet, PDF (3/14 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTICS
JCS830
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Parameter
Symbol
Tests conditions
Min Typ Max Units
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Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
500 - - V
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Breakdown Voltage Temperature
Coefficient
ÎBVDSS/Î ID=250μA, referenced to
TJ
25â
- 0.54 - V/â
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Zero Gate Voltage Drain Current IDSS
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VDS=500V,VGS=0V,
TC=25â
VDS=400V, TC=125â
- - 10 μA
- - 100 μA
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
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Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
éæç¹æ§ On-Characteristics
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Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
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Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=2.25A
- 1.16 1.5 â¦
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Forward Transconductance
gfs
VDS = 40V, ID=2.25Aï¼note
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å¨æç¹æ§ Dynamic Characteristics
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Input capacitance
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Output capacitance
Ciss
Coss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 800 1050 pF
- 76 100 pF
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Reverse transfer capacitance
Crss
- 17 22 pF
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3/14
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