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JCS1HN65C Datasheet, PDF (5/9 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS1HN65C
On-Region Characteristics
VGS
Top
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
1
Transfer Characteristics
10
150℃
1
25℃
Notes:
1. 250μs pulse test
2. TC=25℃
0.1
1
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
16
VGS=20V
15
Notes:
0.1
1.250μs pulse test
2.VDS=40V
2
4
6
8
10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
14
VGS=10V
1
13
150℃
25℃
12
Note :T j=25℃
11
0.0
0.5
1.0
1.5
2.0
0.1
ID [A]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD [V]
Capacitance Characteristics
Gate Charge Characteristics
10
VDS=300V
8
VDS=120V
6
VDS=480V
4
2
0
0
1
2
3
4
Qg Toltal Gate Charge [nC]
版本:201311A
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