JCS1HN65C Datasheet, PDF (3/9 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies

R
电特性 ELECTRICAL CHARACTERISTICS
JCS1HN65C
项目
符号
测试条件
最小 典型 最 大单 位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏－源击穿电压
Drain-Source Voltage
BV_DSS I_D=250μA, V_GS=0V
650 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
∆BV_DSS/∆
T_J
I_D=1mA,
referenced
to
25℃
-
0.60 -
V/℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current ^IDSS
正向栅极体漏电流
V_DS=600V,V_GS=0V, T_C=25℃ -
V_DS=480V, T_C=125℃
-
- 10 μA
- 100 μA
Gate-body leakage current,
forward
I_GSSF
V_DS=0V, V_GS =30V
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
I_GSSR
V_DS=0V, V_GS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS , I_D=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
R_DS(ON) V_GS =10V , I_D=0.5A
- 14 17 Ω
正向跨导
Forward Transconductance
g_fs
动态特性 Dynamic Characteristics
V_DS = 40V , I_D=0.5（note 4） ^{- 0.6 -}
S
输入电容
Input capacitance
输出电容
Output capacitance
C_iss
C_oss
V_DS=25V,
V_GS =0V,
f=1.0MH_Z
- 200 220 pF
- 19 23 pF
反向传输电容
Reverse transfer capacitance
C_rss
- 2.8 4.0 pF
版本：201311A
3/9